发明名称 |
Transistor formation using capping layer |
摘要 |
A method of transistor formation using a capping layer in complimentary metal-oxide semiconductor (CMOS) structures is provided, the method including: depositing a conductive layer over an n-type field effect transistor (nFET) and over a p-type field effect transistor (pFET); depositing a capping layer directly over the conductive layer; etching the capping and conductive layers to form a capped gate conductor to gates of the nFET and pFET, respectively; ion-implanting the nFET transistor with a first dopant; and ion-implanting the pFET transistor with a second dopant, wherein ion-implanting a transistor substantially dopes its source and drain regions, but not its gate region.
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申请公布号 |
US8030196(B2) |
申请公布日期 |
2011.10.04 |
申请号 |
US20100685933 |
申请日期 |
2010.01.12 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;INTERNATIONAL BUSINESS MACHINES CORPORATION;INFINEON TECHNOLOGIES AG |
发明人 |
SEO BONG-SEOK;YANG JONG-HO;YU DONG HEE;KWON O SUNG;KWON OH-JUNG |
分类号 |
H01L21/3205;H01L21/4763 |
主分类号 |
H01L21/3205 |
代理机构 |
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