发明名称 Methods of forming NAND flash memory with fixed charge
摘要 A string of nonvolatile memory cells connected in series includes fixed charges located between floating gates and the underlying substrate surface. Such a fixed charge affects distribution of charge carriers in an underlying portion of the substrate and thus affects threshold voltage of a device. A fixed charge layer may extend over source/drain regions also.
申请公布号 US8030160(B2) 申请公布日期 2011.10.04
申请号 US20100729874 申请日期 2010.03.23
申请人 SANDISK TECHNOLOGIES INC. 发明人 ORIMOTO TAKASHI;MATAMIS GEORGE;CHIEN HENRY;KAI JAMES
分类号 H01L21/8247 主分类号 H01L21/8247
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