发明名称 |
Solar cell and method of fabricating the same |
摘要 |
A solar cell (100) comprising a semiconductor solar cell substrate (66) having a light receiving surface formed on the first major surface and generating photovoltaic power based on the light impinging on the light receiving surface, wherein the light receiving surface of the semiconductor solar cell substrate (66) is coated with a light receiving surface side insulating film (61) composed of an inorganic insulating material where the cationic component principally comprising silicon, and the light receiving surface side insulating film (61) is a low hydrogen content inorganic insulating film containing less than 10 atm % of hydrogen. A solar cell having an insulating film exhibiting excellent passivation effect insusceptible to aging can thereby be provided.
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申请公布号 |
US8030223(B2) |
申请公布日期 |
2011.10.04 |
申请号 |
US20100656360 |
申请日期 |
2010.01.27 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
TAKAHASHI MASATOSHI;OHTSUKA HIROYUKI;MATSUMURA HIDEKI;MASUDA ATSUSHI;IZUMI AKIRA |
分类号 |
H01L21/318;H01L31/04;H01L21/471;H01L31/0216;H01L31/072;H01L31/18 |
主分类号 |
H01L21/318 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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