发明名称 |
Methods of making carbon-containing semiconducting devices by pyrolyzing a polymer including asphalt or petroleum pitch |
摘要 |
Embodiments of the present invention relate to semiconducting carbon-containing devices and methods of making thereof. The semi-conducting carbon containing devices comprise an n-type semiconducting layer and a p-type semiconducting layer, both of which are positioned over a substrate. The n-type semiconducting layer can be formed by pyrolyzing a carbon- and nitrogen-containing polymer, and the p-type semiconducting layer can be formed by pyrolyzing an aromatic- and aliphatic-group-containing polymer. In some embodiments, the devices are solar cell devices.
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申请公布号 |
US8030127(B2) |
申请公布日期 |
2011.10.04 |
申请号 |
US20100753395 |
申请日期 |
2010.04.02 |
申请人 |
NITTO DENKO CORPORATION |
发明人 |
MOCHIZUKI AMANE;NAKAMURA TOSHITAKA;URAIRI MASAKATSU;PAN GUANG |
分类号 |
H01L51/30;H01L31/068;H01L51/40;H01L51/42;H01L51/46;H01L51/48 |
主分类号 |
H01L51/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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