发明名称 |
Manufacturing method of semiconductor device including peeling step |
摘要 |
To simplify a peeling step in a method for manufacturing a semiconductor device including the peeling step. A first layer having a metal film is formed over a substrate; a second layer having a transistor is formed over the first layer having the metal film; a resin material is applied over the layer having the transistor; the resin material is cured by a heat treatment at a first heat treatment temperature to form a resin layer; the layer having the transistor is peeled from the substrate by a heat treatment at a second heat treatment temperature which is higher than the first heat treatment temperature; and the resin layer is peeled from the layer having the transistor by a heat treatment at a third heat treatment temperature which is higher than the second heat treatment temperature.
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申请公布号 |
US8030132(B2) |
申请公布日期 |
2011.10.04 |
申请号 |
US20060442216 |
申请日期 |
2006.05.30 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
OGITA KAORI;TAMURA TOMOKO |
分类号 |
H01L21/027;H01L31/0392 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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