发明名称 Stacked memory module and system
摘要 A three dimensional memory module and system are formed with at least one slave chip stacked over a master chip. Through semiconductor vias (TSVs) are formed through at least one of the master and slave chips. The master chip includes a memory core for increased capacity of the memory module/system. In addition, capacity organizations of the three dimensional memory module/system resulting in efficient wiring is disclosed for forming multiple memory banks, multiple bank groups, and/or multiple ranks of the three dimensional memory module/system.
申请公布号 US8031505(B2) 申请公布日期 2011.10.04
申请号 US20090454064 申请日期 2009.05.12
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KANG UK-SONG;CHUNG HOE-JU;CHOI JANG-SEOK;LEE HOON
分类号 G11C5/02 主分类号 G11C5/02
代理机构 代理人
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