发明名称 |
Method for fabricating MEMS device |
摘要 |
A method for fabricating MEMS device includes: providing a single crystal substrate, having first surface and second surface and having a MEMS region and an IC region; forming SCS mass blocks on the first surface in the MEMS region; forming a structural dielectric layer over the first surface of the substrate, wherein a dielectric member of the structural dielectric layer is filled in spaces surrounding the SCS mass blocks in the MEMS region, the IC region has a circuit structure with an interconnection structure formed in the structural dielectric layer; patterning the single crystal substrate by an etching process on the second surface to expose a portion of the dielectric member filled in the spaces surrounding the SCS mass blocks; performing isotropic etching process at least on the dielectric portion filled in the spaces surrounding the SCS mass blocks. The SCS mass blocks are exposed to release a MEMS structure.
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申请公布号 |
US8030112(B2) |
申请公布日期 |
2011.10.04 |
申请号 |
US20100691754 |
申请日期 |
2010.01.22 |
申请人 |
SOLID STATE SYSTEM CO., LTD. |
发明人 |
HSIEH TSUNG-MIN;LEE CHIEN-HSING;LIOU JHYY-CHENG |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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地址 |
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