发明名称 Method for fabricating MEMS device
摘要 A method for fabricating MEMS device includes: providing a single crystal substrate, having first surface and second surface and having a MEMS region and an IC region; forming SCS mass blocks on the first surface in the MEMS region; forming a structural dielectric layer over the first surface of the substrate, wherein a dielectric member of the structural dielectric layer is filled in spaces surrounding the SCS mass blocks in the MEMS region, the IC region has a circuit structure with an interconnection structure formed in the structural dielectric layer; patterning the single crystal substrate by an etching process on the second surface to expose a portion of the dielectric member filled in the spaces surrounding the SCS mass blocks; performing isotropic etching process at least on the dielectric portion filled in the spaces surrounding the SCS mass blocks. The SCS mass blocks are exposed to release a MEMS structure.
申请公布号 US8030112(B2) 申请公布日期 2011.10.04
申请号 US20100691754 申请日期 2010.01.22
申请人 SOLID STATE SYSTEM CO., LTD. 发明人 HSIEH TSUNG-MIN;LEE CHIEN-HSING;LIOU JHYY-CHENG
分类号 H01L21/00 主分类号 H01L21/00
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