发明名称 Image sensor with decreased optical interference between adjacent pixels
摘要 An image sensor with decreased optical interference between adjacent pixels is provided. An image sensor, which is divided into a pixel region and a peripheral region, the image sensor including a photodiode formed in a substrate in the pixel region, first to Mth metal lines formed over the substrate in the pixel region, where M is a natural number greater than approximately 1, first to Nth metal lines formed over a substrate in the peripheral region, where N is a natural number greater than M, at least one layer of dummy metal lines formed over the Mth metal lines but formed not to overlap with the photodiode, and a microlens formed over the one layer of the dummy metal lines to overlap with the photodiode.
申请公布号 US8030723(B2) 申请公布日期 2011.10.04
申请号 US20090544547 申请日期 2009.08.20
申请人 CROSSTEK CAPITAL, LLC 发明人 LEE WON-HO;CHO DONG-HEON
分类号 H01L31/058;H01L27/14;H01L27/146;H04N5/335;H04N5/357;H04N5/369;H04N5/374 主分类号 H01L31/058
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