发明名称 Lithographic apparatus and device manufacturing method with double exposure overlay control
摘要 A device manufacturing method includes a transfer of a pattern from a patterning device onto a substrate. The device manufacturing method further includes transferring a pattern of a main mark to a base layer for forming an alignment mark; depositing a pattern receiving layer on the base layer; in a first lithographic process, aligning, by using the main mark, a first mask that includes a first pattern and a local mark pattern, and transferring the first pattern and the local mark pattern to the pattern receiving layer; aligning, by using the local mark pattern, a second mask including a second pattern relative to the pattern receiving layer; and in a second lithographic process, transferring the second pattern to the pattern receiving layer; the first and second patterns being configured to form an assembled pattern.
申请公布号 US8029953(B2) 申请公布日期 2011.10.04
申请号 US201113029749 申请日期 2011.02.17
申请人 ASML NETHERLANDS B.V. 发明人 VAN DER SCHAAR MAURITS;VAN HAREN RICHARD JOHANNES FRANCISCUS
分类号 G03F9/00;G03C5/00 主分类号 G03F9/00
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