发明名称 |
Plasma processing apparatus and method for venting the same to atmosphere |
摘要 |
In a plasma processing apparatus provided with control means, gas supply means includes a first gas supply path for supplying a vent gas into a processing chamber by way of a shower plate and a second gas supply path for supplying a vent gas into the processing chamber without via the shower plate, and the control means is capable of adjusting a flow rate of the vent gas of at least one of the first and second gas supply paths in such a manner that a pressure on a back side of the shower plate becomes a pressure that is a positive pressure relative to a pressure in the processing chamber and less than a withstand pressure of the shower plate.
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申请公布号 |
US8029874(B2) |
申请公布日期 |
2011.10.04 |
申请号 |
US20080035759 |
申请日期 |
2008.02.22 |
申请人 |
HITACHI HIGH-TECHNOLOGIES CORPORATION |
发明人 |
KOBAYASHI HIROYUKI;MAEDA KENJI;YOKOGAWA KENETSU;IZAWA MASARU |
分类号 |
H05H1/24 |
主分类号 |
H05H1/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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