发明名称 ANTI-REFLECTION ELEMENT USING SURFACE PLASMON AND HIGH-K DIELECTRIC AND METHOD OF MANUFACTURING THE SAME
摘要 <p>An anti-reflection structure using surface plasmons and a high-k dielectric material, and a method of manufacturing the anti-reflection structure. The anti-reflection structure may include a high-k dielectric layer formed on a substrate, the high-k dielectric layer configured to allow incident light to pass therethrough, and a nano-material layer on the high-k dielectric layer. The high-k dielectric layer may include at least one of zirconium oxide (ZrO2), hafnium oxide (HfO2), titanium oxide (TiO2), tantalum oxide (Ta2O5), lanthanum oxide (La2O3), yttrium oxide (Y2O3) and aluminum oxide (Al2O3).</p>
申请公布号 KR20110107603(A) 申请公布日期 2011.10.04
申请号 KR20100026817 申请日期 2010.03.25
申请人 SAMSUNG ELECTRONICS CO., LTD.;SUNGKYUNKWAN UNIVERSITY FOUNDATION FOR CORPORATE COLLABORATION 发明人 PARK, YOUNG JUN;KIM, JONG MIN;LI HUA MIN;YOO WON JONG
分类号 H01L21/31 主分类号 H01L21/31
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