发明名称 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
摘要 A substrate processing apparatus and a substrate processing method capable of supplying uniform electromagnetic wave power and performing uniform heating are provided. The substrate processing apparatus includes a process chamber for processing a wafer, a boat installed in the process chamber to hold the wafer, a gas introduction part installed below the wafer held by the boat for introducing a gas toward a back surface of the wafer, and a waveguide port installed over the wafer held by the boat for introducing an electromagnetic wave.
申请公布号 KR20110107749(A) 申请公布日期 2011.10.04
申请号 KR20110024191 申请日期 2011.03.18
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 OKUNO MASAHISA;UMEKAWA ATSUSHI
分类号 H01L21/268;H01L21/324 主分类号 H01L21/268
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