发明名称 Reprogramming non-volatile memory devices for read disturbance mitigation
摘要 The present disclosure includes systems and techniques relating to non-volatile memory. The systems and techniques can include accessing a threshold value that is associated with a data area of a non-volatile memory structure, performing a comparison using the threshold value and a first value associated with the data area, and selectively reprogramming data of the data area based on the comparison. A programming operation on the data area can trigger a reset of the first value. Accessing a threshold value can include accessing a second value that reflects a count of programming operations on the data area or a time between programmings and using the second value to select the threshold value.
申请公布号 US8031521(B1) 申请公布日期 2011.10.04
申请号 US20090434544 申请日期 2009.05.01
申请人 MARVELL INTERNATIONAL LTD. 发明人 YANG XUESHI
分类号 G11C11/34 主分类号 G11C11/34
代理机构 代理人
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