发明名称 Sputtering target, method for producing same, sputtering thin film formed by using such sputtering target, and organic EL device using such thin film
摘要 Provided is a sputtering target which can give a high water barrier property and a high flexibility to a sputtering film, can keep a high film forming rate certainly in sputtering, and can make damages to an objective substance wherein a film is to be formed as small as possible. In order to realize this, a mixed powder which contains 20 to 80% by weight of a SiO powder, the balance of the powder being made of a TiO2 powder and/or a Ti powder, is pressed and sintered. The sintered body has a composition of SiαTi&bgr;Oγ wherein α, &bgr; and γ are mole ratios of Si, Ti and O, respectively, and the ratio of α/&bgr; ranges from 0.45 to 7.25 and the ratio of γ/(α+&bgr;) ranges from 0.80 to 1.70.
申请公布号 US8029655(B2) 申请公布日期 2011.10.04
申请号 US20060996550 申请日期 2006.07.03
申请人 OSAKA TITANIUM TECHNOLOGIES CO., LTD.;ROHM CO., LTD. 发明人 KIDO JYUNJI;NATSUME YOSHITAKE;OGASAWARA TADASHI;AZUMA KAZUOMI;MORI KOICHI
分类号 C23C14/00 主分类号 C23C14/00
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