Method for fabricating isolation layer in semiconductor device,申请号KR20090070762-传众专利搜索

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发明名称	Method for fabricating isolation layer in semiconductor device
摘要
申请公布号	KR101069437(B1)	申请公布日期	2011.09.30
申请号	KR20090070762	申请日期	2009.07.31
申请人		发明人
分类号	H01L21/762	主分类号	H01L21/762
代理机构		代理人
主权项
地址

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