| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus for producing a silicon carbide single crystal, in which a portion having the possibility of reaching low temperature is made small in a guide member, so that the single crystal can be grown efficiently. SOLUTION: The apparatus 1 for producing the silicon carbide single crystal includes: a crucible body 5 for housing a raw material 15 to be sublimated; a crucible 9 having a lid 3, to which a seed crystal 23 is fit, at the position opposed to the raw material 15 to be sublimated; the guide member 7 extending cylindrically from the lid 3 toward the raw material 15 to be sublimated; and a heating part 13 arranged on the outer peripheral side of the crucible body 5. The apparatus for producing the silicon carbide single crystal satisfies the expression: H2=(0.5 to 1.0)×H1 (wherein H1 is the height of the guide member 7; H2 is the height of an overlap between the heating part 13 and the guide member 7 in the height direction). COPYRIGHT: (C)2011,JPO&INPIT |
