| 摘要 |
PROBLEM TO BE SOLVED: To prevent the adhesion of foreign matters generated when a resist film is developed by a static development method, and to provide a method for manufacturing a photomask reduced in the foreign materials by using an advantage of the static development method. SOLUTION: The method for developing the resist film 3 dissolves the exposed part in a developing solution by imparting the developing solution to the resist film 3 while leaving it at rest after exposure processing is provided at the resist film formed on a substrate 1. The desorption and adhesion of the foreign materials 7 are prevented by electrical repulsion by charging the substrate 1 and the foreign materials 7 during dissolution for the development. COPYRIGHT: (C)2011,JPO&INPIT |
