| 摘要 |
PROBLEM TO BE SOLVED: To provide a structure of a semiconductor laser that suppresses variations in film thickness of a dielectric film on a light emitting edge, and to provide a method of manufacturing the same. SOLUTION: The method of manufacturing the semiconductor laser includes the steps of: forming a semiconductor wafer 100 having a semiconductor layer, including an active layer, laminated on a semiconductor substrate; forming a plurality of recesses 106 deeper than the active layer in the semiconductor wafer 100; forming a first dielectric film (AR coat film 108) so as to cover at least first edges in the recesses 16 and second edges opposed to the first edges; forming an isolation film (Au film) so as to cover the AR coat film 108 on the first edges; forming a second dielectric film (HR coat film) on the AR coat film 108 on the Au film and the second edges; and removing the HR coat film on the Au film and also removing the Au film, the Au film having an etching selection ratio of≥10 to the AR coat film 108 and the HR coat film. COPYRIGHT: (C)2011,JPO&INPIT
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