| 摘要 |
The present invention improves the performance of a semiconductor device wherein a metal silicide layer is formed through a salicide process. A metal silicide layer is formed over the surfaces of first and second gate electrodes, n+-type semiconductor regions, and p+-type semiconductor regions through a salicide process of a partial reaction type without the use of a salicide process of a whole reaction type. In a heat treatment for forming the metal silicide layer, by heat-treating a semiconductor wafer not with an annealing apparatus using lamps or lasers but with a thermal conductive annealing apparatus using carbon heaters, a thin metal silicide layer is formed with a small thermal budget and a high degree of accuracy and microcrystals of NiSi are formed in the metal silicide layer through a first heat treatment.
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