发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT
摘要 <P>PROBLEM TO BE SOLVED: To provide a method of separating a substrate for growth from a semiconductor layer with good reproducibility even when the semiconductor layer formed on the substrate for growth is thin. <P>SOLUTION: A plurality of columns which are discretely distributed and made of a compound semiconductor are formed on upper surfaces of projection portions on a surface of the substrate for growth which have unevenness formed on the surface. A semiconductor layer is formed which is supported on the substrate for growth by the columns and made of a compound semiconductor. A support substrate is bonded onto the semiconductor layer. The substrate for growth is separated from the semiconductor layer. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011192752(A) 申请公布日期 2011.09.29
申请号 JP20100056480 申请日期 2010.03.12
申请人 STANLEY ELECTRIC CO LTD 发明人 CHINONE TAKAKO;YANA KICHIKO;SHIBATA YASUYUKI;TONO JIRO
分类号 H01L33/32;H01L21/205;H01L33/22 主分类号 H01L33/32
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