发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of separating a substrate for growth from a semiconductor layer with good reproducibility even when the semiconductor layer formed on the substrate for growth is thin. <P>SOLUTION: A plurality of columns which are discretely distributed and made of a compound semiconductor are formed on upper surfaces of projection portions on a surface of the substrate for growth which have unevenness formed on the surface. A semiconductor layer is formed which is supported on the substrate for growth by the columns and made of a compound semiconductor. A support substrate is bonded onto the semiconductor layer. The substrate for growth is separated from the semiconductor layer. <P>COPYRIGHT: (C)2011,JPO&INPIT |
申请公布号 |
JP2011192752(A) |
申请公布日期 |
2011.09.29 |
申请号 |
JP20100056480 |
申请日期 |
2010.03.12 |
申请人 |
STANLEY ELECTRIC CO LTD |
发明人 |
CHINONE TAKAKO;YANA KICHIKO;SHIBATA YASUYUKI;TONO JIRO |
分类号 |
H01L33/32;H01L21/205;H01L33/22 |
主分类号 |
H01L33/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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