| 摘要 |
Provided is a semiconductor device having an ESD protection MOS transistor including a plurality of transistors combined together, in which a plurality of drain regions and a plurality of source regions disposed alternately and a gate electrode disposed between each pair of adjacent regions constituted of one of the plurality of drain regions and one of the plurality of source regions, in which a distance between a salicide metal region, which is formed on each of the plurality of drain regions, and the gate electrode is determined according to contact holes in the plurality of drain regions and a distance of the contact holes from substrate contacts.
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