发明名称 |
DIELECTRIC DEPOSITION USING A REMOTE PLASMA SOURCE |
摘要 |
A sputter deposition system comprises a vacuum chamber including a vacuum pump for maintaining a vacuum in the vacuum chamber, a gas inlet for supplying process gases to the vacuum chamber, a sputter target and a substrate holder within the vacuum chamber, and a plasma source attached to the vacuum chamber and positioned remotely from the sputter target, the plasma source being configured to form a high density plasma beam extending into the vacuum chamber. The plasma source may include a rectangular cross-section source chamber, an electromagnet, and a radio frequency coil, wherein the rectangular cross-section source chamber and the radio frequency coil are configured to give the high density plasma beam an elongated ovate cross-section. Furthermore, the surface of the sputter target may be configured in a non-planar form to provide uniform plasma energy deposition into the target and/or uniform sputter deposition at the surface of a substrate on the substrate holder. The sputter deposition system may include a plasma spreading system for reshaping the high density plasma beam for complete and uniform coverage of the sputter target. |
申请公布号 |
WO2011119611(A2) |
申请公布日期 |
2011.09.29 |
申请号 |
WO2011US29433 |
申请日期 |
2011.03.22 |
申请人 |
APPLIED MATERIALS, INC.;HOFMANN, RALF;FOAD, MAJEED, A. |
发明人 |
HOFMANN, RALF;FOAD, MAJEED, A. |
分类号 |
C23C14/34;C23C14/35;C23C14/50 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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