发明名称 DIELECTRIC DEPOSITION USING A REMOTE PLASMA SOURCE
摘要 A sputter deposition system comprises a vacuum chamber including a vacuum pump for maintaining a vacuum in the vacuum chamber, a gas inlet for supplying process gases to the vacuum chamber, a sputter target and a substrate holder within the vacuum chamber, and a plasma source attached to the vacuum chamber and positioned remotely from the sputter target, the plasma source being configured to form a high density plasma beam extending into the vacuum chamber. The plasma source may include a rectangular cross-section source chamber, an electromagnet, and a radio frequency coil, wherein the rectangular cross-section source chamber and the radio frequency coil are configured to give the high density plasma beam an elongated ovate cross-section. Furthermore, the surface of the sputter target may be configured in a non-planar form to provide uniform plasma energy deposition into the target and/or uniform sputter deposition at the surface of a substrate on the substrate holder. The sputter deposition system may include a plasma spreading system for reshaping the high density plasma beam for complete and uniform coverage of the sputter target.
申请公布号 WO2011119611(A2) 申请公布日期 2011.09.29
申请号 WO2011US29433 申请日期 2011.03.22
申请人 APPLIED MATERIALS, INC.;HOFMANN, RALF;FOAD, MAJEED, A. 发明人 HOFMANN, RALF;FOAD, MAJEED, A.
分类号 C23C14/34;C23C14/35;C23C14/50 主分类号 C23C14/34
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