| 摘要 |
<p>Disclosed is a photoelectric conversion element comprising an organic photoelectric conversion layer, wherein sensitivity degradation due to light irradiation is suppressed. Specifically disclosed is a photoelectric conversion element (100) which is obtained by laminating, on a substrate (101), a first electrode layer (104), a photoelectric conversion layer (15) that contains an organic material, and a second electrode layer (108). The photoelectric conversion layer (15) comprises a bulk heterostructure of a P-type organic semiconductor and an N-type organic semiconductor, and the difference between the ionization potential of the P-type organic semiconductor and the apparent ionization potential of the bulk heterostructure is 0.50 eV or less. Consequently, sensitivity degradation due to light irradiation can be suppressed.</p> |
