发明名称 FABRICATION OF MAGNETIC TUNNEL JUNCTION (MTJ) DEVICES WITH REDUCED SURFACE ROUGHNESS FOR MAGNETIC RANDOM ACCESS MEMORY (MRAM)
摘要 <p>Reliability and yield of MTJ devices is improved by reducing surface roughness in the MTJ layers of the MTJ devices. Surface roughness is reduced by reducing surface roughness of layers below the MTJ layers such as the bottom electrode layer. Planarizing the bottom electrode layer through chemical mechanical polishing or etch back of spin-on material before depositing the MTJ layers decreases surface roughness of the bottom electrode layer and the MTJ layers. Alternatively, a capping layer may be planarized before deposition of the bottom electrode layer and MTJ layers to reduce surface roughness in the capping layer, the bottom electrode layer, and the MTJ layers.</p>
申请公布号 WO2011119646(A1) 申请公布日期 2011.09.29
申请号 WO2011US29482 申请日期 2011.03.22
申请人 QUALCOMM INCORPORATED;LI, XIA 发明人 LI, XIA
分类号 H01L43/12 主分类号 H01L43/12
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