发明名称 |
VERTICAL FUSION SEMICONDUCTOR DEVICE |
摘要 |
A vertically stacked fusion semiconductor device includes a channel portion which extends in a first direction with respect to a surface of a semiconductor layer, a common source line which extends in a second direction different from the first direction and is electrically connected to the channel portion, a first gate structure which is electrically connected to the common source line via the channel portion and a second gate structure which is electrically connected to the common source line via the channel portion and is on an opposite side of the common source line to the first gate structure. |
申请公布号 |
KR20110106682(A) |
申请公布日期 |
2011.09.29 |
申请号 |
KR20100025872 |
申请日期 |
2010.03.23 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SON, YONG HOON;HWANG, KI HYUN |
分类号 |
H01L21/8239;H01L27/10 |
主分类号 |
H01L21/8239 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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