| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide in situ dopant implantation and growth that achieve laterally and vertically selective spatially defined doping of a nitride body, while maintaining the structural and stoichiometric properties of the semiconductor material. <P>SOLUTION: A method enabling in situ dopant implantation during growth of a nitride semiconductor body has steps of: establishing a growth environment for the nitride semiconductor body in a composite nitride chamber having a dopant implanter and a growth chamber; growing the nitride semiconductor body in the growth chamber; and implanting the nitride semiconductor body in situ in the growth chamber using the dopant implanter. A semiconductor device produced using the disclosed method has: a nitride semiconductor body having a first conductivity type formed over a support substrate; and at least one doped region produced by in situ dopant implantation of the nitride semiconductor body during its growth, having a second conductivity type. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
