| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a spiral inductor in which an area of an insulation layer formed on a wiring board surface in the lower part thereof is defined. SOLUTION: The semiconductor device has a semiconductor substrate SB, an isolation oxide film 19 disposed in the main surface of the semiconductor substrate SB, a spiral inductor SI disposed on a region where the isolation oxide film 19 is formed with an interlayer insulation film held therebetween, and a dummy pattern region DMR disposed around the isolation oxide film 19 and isolated by an isolation oxide film PT having a plane view width smaller than that of the isolation oxide film 19 where the oxide film 19 is disposed in a region wider than that of the spiral inductor SI. COPYRIGHT: (C)2011,JPO&INPIT
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