发明名称 |
NONVOLATILE MEMORY DEVICES AND METHODS OF FORMING THE SAME |
摘要 |
Provided are nonvolatile memory devices and methods of forming nonvolatile memory devices. Nonvolatile memory devices include a device isolation layer that defines an active region in a substrate. Nonvolatile memory devices further include a first insulating layer, a nonconductive charge storage pattern, a second insulating layer and a control gate line that are sequentially disposed on the active region. The charge storage pattern includes a horizontal portion and a protrusion disposed on an upper portion of an edge of the horizontal portion.
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申请公布号 |
US2011233650(A1) |
申请公布日期 |
2011.09.29 |
申请号 |
US201113152307 |
申请日期 |
2011.06.03 |
申请人 |
PARK JIN-TAEK;JUNG WON-SEOK |
发明人 |
PARK JIN-TAEK;JUNG WON-SEOK |
分类号 |
H01L29/792 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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