| 摘要 |
A semiconductor device is disclosed wherein a tin diffusion inhibiting layer is provided above the land of a wiring line, and a solder ball is provided above the tin diffusion inhibiting layer. Thus, even when this semiconductor device is, for example, a power supply IC which deals with a high current, the presence of the tin diffusion inhibiting layer makes it possible to more inhibit the diffusion of tin in the solder ball into the wiring line.
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