发明名称 |
Integrated Circuit Devices Having High Density Logic Circuits Therein Powered Using Multiple Supply Voltages |
摘要 |
Integrated circuit devices include a substrate having a semiconductor substrate region therein containing multiple well regions of different conductivity type. A first semiconductor well region of first conductivity type is provided in the semiconductor substrate region. This first semiconductor well region has a first plurality of transistor regions therein arranged in a first zig-zag pattern extending across the semiconductor substrate region. A second semiconductor well region of second conductivity type is also provided in the semiconductor substrate region. This second semiconductor well region has a second plurality of transistor regions therein arranged in a second zig-zag pattern extending across the semiconductor substrate region. This second zig-zag pattern is intertwined with the first zig-zag pattern. A plurality of first transistors of second conductivity type are provided in the first plurality of transistor regions and a plurality of second transistors of first conductivity type are provided in the second plurality of transistors regions.
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申请公布号 |
US2011233629(A1) |
申请公布日期 |
2011.09.29 |
申请号 |
US201113018568 |
申请日期 |
2011.02.01 |
申请人 |
HAN SANGSHIN |
发明人 |
HAN SANGSHIN |
分类号 |
H01L29/94;H01L27/088;H01L27/092 |
主分类号 |
H01L29/94 |
代理机构 |
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