发明名称 Integrated Circuit Devices Having High Density Logic Circuits Therein Powered Using Multiple Supply Voltages
摘要 Integrated circuit devices include a substrate having a semiconductor substrate region therein containing multiple well regions of different conductivity type. A first semiconductor well region of first conductivity type is provided in the semiconductor substrate region. This first semiconductor well region has a first plurality of transistor regions therein arranged in a first zig-zag pattern extending across the semiconductor substrate region. A second semiconductor well region of second conductivity type is also provided in the semiconductor substrate region. This second semiconductor well region has a second plurality of transistor regions therein arranged in a second zig-zag pattern extending across the semiconductor substrate region. This second zig-zag pattern is intertwined with the first zig-zag pattern. A plurality of first transistors of second conductivity type are provided in the first plurality of transistor regions and a plurality of second transistors of first conductivity type are provided in the second plurality of transistors regions.
申请公布号 US2011233629(A1) 申请公布日期 2011.09.29
申请号 US201113018568 申请日期 2011.02.01
申请人 HAN SANGSHIN 发明人 HAN SANGSHIN
分类号 H01L29/94;H01L27/088;H01L27/092 主分类号 H01L29/94
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