| 摘要 |
A method of forming can be provided by forming a metal silicide layer that includes a diffusion metal on a substrate. A native oxide layer can be formed on the metal silicide layer and forming a metal oxide layer by reacting the native oxide layer with the diffusion metal. A phase-change layer and an upper electrode can be formed on the metal oxide layer. A phase-change memory device can include a substrate and a conductive region on the substrate with a lower electrode on the conductive region, where the lower electrode can include a metal silicide layer on the conductive region and a metal silicon nitride layer having a resistivity of about 10 to about 100 times that of the metal silicide layer. A metal oxide layer can be located between the metal silicon nitride layer and the metal silicide layer, the metal oxide layer comprising a resistivity that is greater than that of the metal silicide layer and less than the resistivity of the metal silicon nitride layer. A phase-change layer and an upper electrode can be located on the lower electrode. |
