METHOD OF MANUFACTURING ELECTRICAL CONTACTS OF A SILICON SOLAR CELL STRUCTURE
摘要
<p>The present invention relates to a method of manufacturing at least one electrical contact of a silicon solar cell structure comprising the steps of: providing a silicon substrate (11); forming at least one silicon layer (12, 13) on at least one side of the silicon substrate, wherein the silicon substrate and the silicon layer are doped in such a way that a p-n junction is formed between the silicon substrate and the silicon layer; forming at least one transparent conductive oxide (TCO) layer (14, 15) on the at least one silicon layer; forming a metal oxide or carbide layer (16) on the TCO layer, wherein the metal oxide or carbide layer has a lower conductance than the TCO layer; patterning the metal oxide or carbide layer by laser patterning; and forming at least one metal contact (17) on the patterned metal oxide or carbide layer by single- sided electroplating or by metal printing and firing.</p>
申请公布号
WO2011117797(A1)
申请公布日期
2011.09.29
申请号
WO2011IB51164
申请日期
2011.03.21
申请人
ROTH & RAU AG;BOEHME, RICO;ANDRAULT, YOANN;BUECHEL, ARTHUR;PAPET, PIERRE
发明人
BOEHME, RICO;ANDRAULT, YOANN;BUECHEL, ARTHUR;PAPET, PIERRE