发明名称 |
HYBRID VACUUM DEPOSITION DEVICE |
摘要 |
<p>A hybrid vacuum deposition device comprises a vacuum chamber (4), a cathode electric arc evaporating source (2), an intermediate frequency magnetron sputtering source (7), a DC magnetron sputtering source (8), a reaction gas ion source (10) and a work-piece bracket (3). Working gas enters the vacuum chamber (4) through gas intake pipes (6) set near the intermediate frequency magnetron sputtering source (7) and the DC magnetron sputtering source (8). Through optimal arrangement of said components, the gas concentration near the intermediate frequency magnetron sputtering source (7) and the DC magnetron sputtering source (8) is lower than that near the cathode electric arc evaporating source (2). Thus the advantages of each film forming source are exerted and the film faults are restrained.</p> |
申请公布号 |
WO2011116495(A1) |
申请公布日期 |
2011.09.29 |
申请号 |
WO2010CN00364 |
申请日期 |
2010.03.24 |
申请人 |
CHINA UNIVERSITY OF GEOSCIENCES (BEIJING) |
发明人 |
FU, ZHIQIANG;WANG, CHENGBIAO;ZHANG, WEI;YUE, WEN;PENG, ZHIJIAN;YU, XIANG |
分类号 |
C23C14/35;C23C14/32;C23C14/48 |
主分类号 |
C23C14/35 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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