发明名称 |
SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF |
摘要 |
A semiconductor structure is provided. A second conductivity type well region is formed on a first conductivity type substrate. A second conductivity type diffused source and second conductivity type diffused drain are formed on the first conductivity type substrate. A gate structure is formed on the second conductivity type well region between the second conductivity type diffused source and the second conductivity type diffused drain. First conductivity type buried rings are arranged in a horizontal direction, and formed in the second conductivity type well region, and divide the second conductivity type well region into an upper drift region and a lower drift region.
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申请公布号 |
US2011233672(A1) |
申请公布日期 |
2011.09.29 |
申请号 |
US20100748703 |
申请日期 |
2010.03.29 |
申请人 |
CHANG YIH-JAU;TU SHANG-HUI;SHEU GENE;CHANG YI-FONG;PALAVALLI NITHIN DEVARAJULU |
发明人 |
CHANG YIH-JAU;TU SHANG-HUI;SHEU GENE;CHANG YI-FONG;PALAVALLI NITHIN DEVARAJULU |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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