| 摘要 |
A light emitting diode chip includes a thermal conductive substrate, an epi-layer, a thin-type ohmic contacting film, a transparent conducting layer, and an electrode pad. The epi-layer includes a p-type semiconductor layer, an n-type semiconductor layer, and an active layer. The n-type semiconductor layer includes a stepped surface at a side thereof facing away from the substrate, and the stepped surface includes a central portion and a peripheral portion surrounding the central portion. The n-type semiconductor layer has a thickness decreasing along directions from a center thereof to opposite lateral peripheries thereof. The ohmic contacting film is arranged on the stepped surface. The conducting layer is arranged on the ohmic contacting film. The electrode pad is arranged on the conducting layer and located corresponding to the central portion of the stepped surface.
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