发明名称 |
Avalanche capability improvement in power semiconductor devices |
摘要 |
A power semiconductor device with improved avalanche capability structures is disclosed. By forming at least an avalanche capability enhancement doped regions with opposite conductivity type to epitaxial layer underneath an ohmic contact doped region which surrounds at least bottom of trenched contact filled with metal plug between two adjacent gate trenches, avalanche current is enhanced with the disclosed structures.
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申请公布号 |
US2011233606(A1) |
申请公布日期 |
2011.09.29 |
申请号 |
US20100659957 |
申请日期 |
2010.03.26 |
申请人 |
FORCE MOS TECHNOLOGY CO. LTD. |
发明人 |
HSIEH FU-YUAN |
分类号 |
H01L29/78;H01L21/336;H01L29/739 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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