发明名称 |
Embedded DRAM Integrated Circuits with Extremely Thin Silicon-On-Insulator Pass Transistors |
摘要 |
Integrated circuits having combined memory and logic functions are provided. In one aspect, an integrated circuit is provided. The integrated circuit comprises: a substrate comprising a silicon layer over a BOX layer, wherein a select region of the silicon layer has a thickness of between about three nanometers and about 20 nanometers; at least one eDRAM cell comprising: at least one pass transistor having a pass transistor source region, a pass transistor drain region and a pass transistor channel region formed in the select region of the silicon layer; and a capacitor electrically connected to the pass transistor.
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申请公布号 |
US2011233634(A1) |
申请公布日期 |
2011.09.29 |
申请号 |
US201113153806 |
申请日期 |
2011.06.06 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CAI JIN;CHANG JOSEPHINE;CHANG LELAND;JI BRIAN L.;KOESTER STEVEN JOHN;MAJUMDAR AMLAN |
分类号 |
H01L27/108 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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