| 摘要 |
A method of fabricating a semiconductor device is disclosed that includes forming a metal layer over a device substrate, forming a via in contact with the metal layer, and adding a dielectric layer above the via. The method further includes etching a portion of the dielectric layer to form a trench area, and depositing a perpendicular magnetic tunnel junction (MTJ) structure within the trench area, similar to a damascine structure. The MTJ structure has a horizontal portion and at least one vertical portion; for example, it is V-shaped or L - shaped. |
