发明名称 |
Three-Dimensional Semiconductor Memory Devices And Methods Of Fabricating The Same |
摘要 |
Three-dimensional semiconductor memory devices and methods of fabricating the same. The three-dimensional semiconductor devices include an electrode structure with sequentially-stacked electrodes disposed on a substrate, semiconductor patterns penetrating the electrode structure, and memory elements including a first pattern and a second pattern interposed between the semiconductor patterns and the electrode structure, the first pattern vertically extending to cross the electrodes and the second pattern horizontally extending to cross the semiconductor patterns. |
申请公布号 |
US2011233648(A1) |
申请公布日期 |
2011.09.29 |
申请号 |
US201113072078 |
申请日期 |
2011.03.25 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SEOL KWANG SOO;PARK CHANJIN;HWANG KIHYUN;CHOI HANMEI;YOO DONGCHUL;HUR SUNGHOI;HWANG WANSIK;NAKANISHI TOSHIRO;PARK KWANGMIN;LEE JUYUL |
分类号 |
H01L29/792;H01L21/28 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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