FIELD EFFECT TRANSISTOR, METHOD OF MANUFACTURE FOR FIELD EFFECT TRANSISTOR, AND ELECTRONIC DEVICE

摘要

Disclosed is a field effect transistor with both high threshold voltage and low on resistance, a method of manufacture for the field effect transistor, and an electronic device. The field effect transistor comprises: a buffer layer (112), a channel layer (113), a barrier layer (114) and a spacer layer (115), each formed of a group III nitride semiconductor, and the upper surface of each formed of group III atoms perpendicular to a (0001) crystal axis; wherein a substrate (100) is layered with the buffer layer (112) the lattice of which has been relaxed, the channel layer (113) which possesses compressive strain, the barrier layer (114) which possesses tensile strain, and the spacer layer (115) which possesses compressive strain, in that order. A gate insulator film (14) is disposed above the spacer layer (115), a gate electrode (15) is disposed above the gate insulator film (14), and a source electrode (161) and drain electrode (162) are electrically connected to the channel layer (113) either directly or via another structural element.