发明名称 |
METHOD OF ERASING IN NON-VOLATILE MEMORY DEVICE |
摘要 |
An erasing method of post-programming in a nonvolatile memory device. The method includes post-programming dummy memory cells; verifying whether threshold voltages of the dummy memory cells are greater than or equal to a first voltage; post-programming normal memory cells; and verifying whether threshold voltages of the normal memory cells are greater than or equal to a second voltage. The first voltage is different from the second voltage.
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申请公布号 |
US2011235432(A1) |
申请公布日期 |
2011.09.29 |
申请号 |
US201113153285 |
申请日期 |
2011.06.03 |
申请人 |
KIM DOO-GON;PARK KI-TAE;LEE YEONG-TAEK |
发明人 |
KIM DOO-GON;PARK KI-TAE;LEE YEONG-TAEK |
分类号 |
G11C16/28 |
主分类号 |
G11C16/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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