COPPER ALLOY FOR ELECTRONIC MATERIAL AND METHOD OF MANUFACTURE FOR SAME

摘要

Disclosed is a copper alloy for electronic material which exhibits excellent plating film uniformity. When the cross section of the copper alloy is observed by SIM in a direction parallel to the rolling direction thereof: at a depth of 5µm or less from the surface layer, the area of the copper alloy occupied by amorphous structures and crystal grains having a grain diameter of less than 1µm is at most 1%; and at a depth of 0.2-0.5µm from the surface layer, the ratio of the number of crystal grains having a grain diameter of at least 0.1µm and less than 0.2nm to the overall number of crystal grains having a grain diameter of at least 1µm is at least 47.5%.