发明名称 Method for processing substrate for thin film photovoltaic cell, involves arranging electrical conductive layer on surface area, after changing material property in region of substrate, where region abuts on surface area
摘要 <p>The method involves providing a transparent substrate (101) with a material property and a mixture containing a combustible gas or atmospheric plasma. An additive is added to the mixture. A surface area (102) of the substrate is flamed or plasma-treated with the mixture so as to change material property in a region (103) of the substrate in dependence of the additive, where the region abuts on the surface area. An electrical conductive layer (104) is arranged on the surface area after changing the material property in the region of the substrate. The region in the substrate is provided with metallic ions (111), metal atoms (112) and metallic cations. The mixture is provided with metallic compound containing chlorine and organic compound containing silicon. The surface area of the substrate is coated with a silicate layer and an aluminum oxide film. Independent claims are also included for the following: (1) an arrangement comprising a transparent substrate (2) a photovoltaic cell comprising a photoactive layer stack.</p>
申请公布号 DE102010013038(A1) 申请公布日期 2011.09.29
申请号 DE20101013038 申请日期 2010.03.26
申请人 SUNFILM AG 发明人 HOFMANN, ANDREAS;SAEUBERLICH, FRANK, DR.;SPRINGER, GOETZ, DR.
分类号 H01L21/283;H01L31/04;H01L31/18 主分类号 H01L21/283
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