POLYMER COMPOSITION FOR RESIST, RESIST COMPOSITION, AND METHOD OF MANUFACTURING SUBSTRATE ON WHICH PATTERN IS FORMED

摘要

PROBLEM TO BE SOLVED: To provide a polymer composition for resist, which forms a resist pattern having high dry-etching resistance, and also to provide a method of manufacturing a resist composition.

SOLUTION: The polymer composition for resist includes: a polymer (A) having an architecture unit (a) having an acid-leaving group; and 3 pts.mass or more of a radical scavenger (B) based on 100 pts.mass of the polymer (A). Besides the polymer (A) and the radical scavenger (B), the polymer composition includes: a photoacid generator (C) that generates an acid by the irradiation with an active beam or radioactive ray; and a solvent. Based on 100 pts.mass of the polymer (A), the content of the radical scavenger (B) is 3-40 pts.mass; and the content of the compound (C) is 0.1-20 pts.mass.

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