发明名称 |
MEMORY DEVICE HAVING SELF-ALIGNED CELL STRUCTURE |
摘要 |
<p>Some embodiments include apparatus and methods having a memory device with diodes coupled to memory elements. Each diode may be formed in a recess of the memory device. The recess may have a polygonal sidewall. The diode may include a first material of a first conductivity type (e.g., n-type) and a second material of a second conductive type (e.g., p-type) formed within the recess.</p> |
申请公布号 |
SG173573(A1) |
申请公布日期 |
2011.09.29 |
申请号 |
SG20110056686 |
申请日期 |
2010.02.05 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
LIU, JUN;VIOLETTE, MICHAEL, P. |
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