| 摘要 |
PROBLEM TO BE SOLVED: To provide: a plasma etching method to perform an etching such that even a deep hole is in an excellent shape; a plasma etching apparatus; and a computer-readable storage medium. SOLUTION: The present invention relates to the plasma etching method to perform a plasma etching on a silicon oxide film or a silicon nitride film formed below an amorphous carbon film by using a pattern of the amorphous carbon film being a final mask in a multilayer mask including a photoresist layer having a prescribed pattern formed, an organic anti-reflection coating film formed below the photoresist layer, an SiON film formed below the anti-reflection coating film, and the amorphous carbon film formed below the SiON film. An initial mask used at the time when the plasma etching of the silicon oxide film or the silicon nitride film is started is under a state in which the SiON film remains on the amorphous carbon film and a ratio of a film thickness of the amorphous carbon film to a film thickness of the residual SiON film is equal to or smaller than about 14. COPYRIGHT: (C)2011,JPO&INPIT |
