| 摘要 |
A method of manufacturing a semiconductor device may include, but is not limited to the following processes. A first hole is formed in an insulating film. A seed layer, which covers an upper surface of the insulating film and an inner surface of the first hole, is formed. A first plating film is formed over the seed layer at a first growth rate. A second plating film is formed over the first plating film at a second growth rate that is higher than the first growth rate. A third plating film is formed over the second plating film at a third growth rate that is higher than the second growth rate.
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