发明名称 |
METHOD FOR FABRICATION OF A SEMICONDUCTOR DEVICE AND STRUCTURE |
摘要 |
A method for fabrication of 3D semiconductor devices utilizing a layer transfer and steps for forming transistors on top of a pre-fabricated semiconductor device comprising transistors formed on crystallized semiconductor base layer and metal layer for the transistors interconnections and insulation layer. The advantage of this approach is reduction of the over all metal length used to interconnect the various transistors.
|
申请公布号 |
US2011233676(A1) |
申请公布日期 |
2011.09.29 |
申请号 |
US201113073268 |
申请日期 |
2011.03.28 |
申请人 |
MONOLITHIC 3D INC. |
发明人 |
OR-BACH ZVI;SEKAR DEEPAK C.;CRONQUIST BRIAN;BEINGLASS ISRAEL;DE JONG JAN LODEWIJK |
分类号 |
H01L27/12 |
主分类号 |
H01L27/12 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|