<p>In the disclosed method, a seed crystal (11) having a front surface and a rear surface is prepared. The surface roughness of the rear surface of the seed crystal (11) is increased. A coating film containing carbon is formed on the rear surface of the seed crystal. The coating film and a seat (41) are put in contact with each other, sandwiching an adhesive. The adhesive is cured in order to affix the seed crystal (11) to the seat (41). A monocrystal (52) is grown on the seed crystal (11). Before performing the abovementioned growth, a carbon film (22) is formed by means of carbonizing the abovementioned coating film.</p>
申请公布号
WO2011065239(A9)
申请公布日期
2011.09.29
申请号
WO2010JP70175
申请日期
2010.11.12
申请人
SUMITOMO ELECTRIC INDUSTRIES, LTD.;NISHIGUCHI, TARO;SASAKI, MAKOTO;HARADA, SHIN