发明名称 |
RATE-ENHANCED CMP COMPOSITIONS FOR DIELECTRIC FILMS |
摘要 |
<p>The invention provides a chemical-mechanical polishing composition consisting essentially of silica, an oxidizing agent, a quaternary ammonium compound, and water. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition. The polishing composition provides for enhanced polishing rates when used to polish dielectric films.No Figure</p> |
申请公布号 |
SG174001(A1) |
申请公布日期 |
2011.09.29 |
申请号 |
SG20110053154 |
申请日期 |
2007.07.12 |
申请人 |
CABOT MICROELECTRONICS CORPORATION |
发明人 |
VACASSY, ROBERT;BAYER, BENJAMIN;CHEN, ZHAN;CHAMBERLAIN, JEFFREY |
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